UMZ8.2T
Diodes
Zener diode
UMZ8.2T
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!Applications
Constant voltage control
Noise suppression on signal line
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!Features
1) Small surface mounting type. (UMD3)
2) Multiple diodes with common cathode configuration.
3) High reliability.
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!Construction
Silicon epitaxial planar
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!Circuit
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!External dimensions
(Units : mm)
2.1
0.1
1.25
0.1
0.1Min.
0~0.1
0.15
0.05
0.3
0.1
2.0
0.2
1.3
0.1
0.65
0.65
0.9
0.1
0.3
0.6
6 R
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
(All leads have the same dimensions)
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!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
Limits
Unit
P
200
mW
Tj
150
C
Tstg
C
-
55
~
+
150
Power dissipation
Junction temperature
Storage temperature
Total of 2 elements.
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!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
Z
7.76
-
8.64
V
I
Z
=
5mA
I
R
-
-
0.50
A
V
R
=
5V
Z
Z
-
-
30
I
Z
=
5mA
Z
ZK
-
-
60
I
Z
=
0.5mA
Zener voltage
Reverse current
Operating resistance
Rising operating resistance
UMZ8.2T
Diodes
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!Electrical characteristic curves
(Ta = 25
C)
0
ZENER VOLTAGE : V
Z
(V)
ZENER CURRENT : I
Z
(
mA)
2
4
6
8
10
12
14
100n
1
10
100
1m
10m
100m
Fig. 1 Zener voltage characteristics
0.1
1
10
1
10
100
DYNAMIC IMPEADANCE : Z
Z
(
)
ZENER CURRENT : I
Z
(mA)
Fig. 2 Operating resistance
Zener current characteristics
Ta
=
25
C
0
0
25
50
100
150
300
200
100
POWER DISSIPATION : Pd (mW)
AMBIENT TEMPERATURE : Ta (
C)
Fig. 3 Derating curve
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